| PART |
Description |
Maker |
| LNA2802L |
GaAs Infrared Light Emitting Diode
Infrared Light Emitting Diodes
|
PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
| LNA2601L |
GaAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| LN57 |
GAAS INFRARED LIGHT EMITTING DIODE
|
PANASONIC[Panasonic Semiconductor]
|
| LN51L LN51F |
GaAs Infrared Light Emitting Diodes
|
PANASONIC[Panasonic Semiconductor]
|
| MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-144G1 144G1 |
Infrared Emitting Diodes (IRED)
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| 4N40 4N39 |
Photo Coupled Isolator GaAs Infrared Emitting Diode & Light Activated SCR(正向峰值电00V的光耦合/隔离器（由GaAs红外发光二极光活性硅控整流器组成
|
Isocom Components
|
| TLN217 |
Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus
|
Toshiba Corporation
Toshiba Semiconductor
|
| SEP8506-001 |
SEP Series GaAs Infrared Emitting Diode, Side-emitting
|
Honeywell Accelerometer...
|
